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NP180N04TUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
V GS = 10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
4
3
2
1
0
I D = 90 A
Pulsed
10000
1000
100
V GS = 0 V
f = 1 MHz
C iss
C oss
C rss
-75
-25
25
75
125
175
225
0.1
1
10
100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
40
35
V DD = 32 V
12
100
10
t r
t d(off)
t d(on)
t f
30
25
20
15
20 V
8 V (160 A)
V GS
9
6
1
V DD = 20 V
V GS = 10 V
R G = 0 Ω
10
5
0
V DS
I D = 180 A
3
0
0.1
1
10
100
1000
0
40
80
120
160
200
240
280
1000
I D - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
V GS = 10 V
0V
100
10
1
Pulsed
10
1
di/dt = 100 A/ μ s
V GS = 0 V
0
0.5
1
1.5
0.1
1
10
100
1000
V F(S-D) - Source to Drain Voltage - V
Data Sheet D18896EJ1V0DS
I F - Diode Forward Current - A
5
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NP180N04TUG-E2-AY
制造商:Renesas Electronics Corporation 功能描述:
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制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
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功能描述:MOSFET N-CH 40V 180A TO-263-7 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
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制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
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制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 40V, TO263-7P - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 180A TO-263
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制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
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制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
